STD2HNK60Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

2A

Threshold Voltage :

3.75V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

45W Tc

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Resistance :

4.8Ohm

Length :

19.05mm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1A, 10V

Turn-Off Delay Time :

13 ns

Number of Terminations :

3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Width :

6.35mm

REACH SVHC :

No SVHC

Rise Time :

30ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Lead Free :

Lead Free

Fall Time (Typ) :

50 ns

Base Part Number :

STD2HNK

Height :

6.35mm

Drain Current-Max (Abs) (ID) :

2A

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Power Dissipation :

45W

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Nominal Vgs :

3.75 V

Turn On Delay Time :

10 ns

Pin Count :

3

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

8A

Weight :

4.535924g

Series :

SuperMESH™

Transistor Element Material :

SILICON

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Vgs (Max) :

±30V