STD26NF10
- Mfr.Part #
- STD26NF10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 25A DPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1550pF @ 25V
- Resistance :
- 38mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- STripFET™ II
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Base Part Number :
- STD26N
- Turn On Delay Time :
- 17 ns
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 12.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 15 ns
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 480 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Power Dissipation-Max :
- 100W Tc
- Rise Time :
- 60ns
- Drain to Source Breakdown Voltage :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 60 ns
- Power Dissipation :
- 100W
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 25A
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Datasheets
- STD26NF10
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N-Channel Tape & Reel (TR) 38m Ω @ 12.5A, 10V ±20V 1550pF @ 25V 55nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD26NF10 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 480 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STD26NF10 Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
STD26NF10 Applications
There are a lot of STMicroelectronics
STD26NF10 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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