STD19N3LLH6AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

30W Tc

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

10A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Position :

Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

33m Ω @ 5A, 10V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101, STripFET™

DS Breakdown Voltage-Min :

30V

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

40A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

130 mJ

ECCN Code :

EAR99

Mount :

Surface Mount

Base Part Number :

STD19

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain-source On Resistance-Max :

0.05Ohm

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

321pF @ 25V