STB6NM60N
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- Mfr.Part #
- STB6NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.6A D2PAK
- Stock
- 17,216
- In Stock ：
- 17,216
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 4.6A
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 45W Tc
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 50V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 245
- Resistance :
- 920mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 45W
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Rise Time :
- 8ns
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Series :
- MDmesh™ II
- Transistor Element Material :
- SILICON
- Base Part Number :
- STB6N
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature :
- AVALANCHE ENERGY RATED
- Drain to Source Breakdown Voltage :
- 600V
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 25V
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- Turn-Off Delay Time :
- 40 ns
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Tc
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 9 ns
- Rds On (Max) @ Id, Vgs :
- 920m Ω @ 2.3A, 10V
- Number of Terminations :
- 2
- Vgs (Max) :
- ±25V
- Pulsed Drain Current-Max (IDM) :
- 18.4A
- Datasheets
- STB6NM60N
N-Channel Tape & Reel (TR) 920m Ω @ 2.3A, 10V ±25V 420pF @ 50V 13nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB6NM60N Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 65 mJ.A device's maximum input capacitance is 420pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 18.4A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB6NM60N Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 18.4A.
STB6NM60N Applications
There are a lot of STMicroelectronics
STB6NM60N applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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