STB60NF10T4

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Mfr.Part #
STB60NF10T4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 80A D2PAK
Stock
8,184
In Stock :
8,184

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Nominal Vgs :
3 V
Peak Reflow Temperature (Cel) :
245
Element Configuration :
Single
Continuous Drain Current (ID) :
40A
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Length :
10.75mm
FET Type :
N-Channel
Height :
4.6mm
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Base Part Number :
STB60N
Avalanche Energy Rating (Eas) :
485 mJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voltage - Rated DC :
100V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Radiation Hardening :
No
Factory Lead Time :
12 Weeks
Turn On Delay Time :
17 ns
Input Capacitance (Ciss) (Max) @ Vds :
4270pF @ 25V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Turn-Off Delay Time :
82 ns
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
30
Width :
10.4mm
Transistor Element Material :
SILICON
Number of Terminations :
2
Termination :
SMD/SMT
Dual Supply Voltage :
100V
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Power Dissipation :
300W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Current Rating :
80A
Drain to Source Breakdown Voltage :
100V
Resistance :
23mOhm
Fall Time (Typ) :
23 ns
Lead Free :
Lead Free
Rise Time :
56ns
Power Dissipation-Max :
300W Tc
Number of Pins :
3
Threshold Voltage :
3V
Pin Count :
3
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn) - annealed
Series :
STripFET™ II
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Rds On (Max) @ Id, Vgs :
23m Ω @ 40A, 10V
Datasheets
STB60NF10T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB60NF10T4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Base Part Number:STB60N, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, STB60NF10T4 pinout, STB60NF10T4 datasheet PDF, STB60NF10T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB60NF10T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB60NF10T4


N-Channel Tape & Reel (TR) 23m Ω @ 40A, 10V ±20V 4270pF @ 25V 104nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB60NF10T4 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 485 mJ.The maximum input capacitance of this device is 4270pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 82 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STB60NF10T4 Features


the avalanche energy rating (Eas) is 485 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 82 ns
a threshold voltage of 3V


STB60NF10T4 Applications


There are a lot of STMicroelectronics
STB60NF10T4 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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