STB60NF10-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Peak Reflow Temperature (Cel) :

225

Turn-Off Delay Time :

82 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Base Part Number :

STB60N

Terminal Finish :

MATTE TIN

Drain to Source Breakdown Voltage :

100V

Rise Time :

56ns

Input Capacitance (Ciss) (Max) @ Vds :

4270pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Packaging :

Tube

Avalanche Energy Rating (Eas) :

485 mJ

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

23m Ω @ 40A, 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Mounting Type :

Through Hole

Pin Count :

3

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Fall Time (Typ) :

23 ns

Mount :

Through Hole

Transistor Application :

SWITCHING

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminations :

3

Series :

STripFET™ II

Power Dissipation :

300W

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ