STB60NF06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

35 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Radiation Hardening :

No

Power Dissipation :

110W

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

55 ns

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Voltage - Rated DC :

60V

Vgs (Max) :

±15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB60N

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

LOW THRESHOLD, AVALANCHE RATED

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

1V

Length :

10.4mm

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Lead Free :

Lead Free

Rise Time :

220ns

Gate to Source Voltage (Vgs) :

15V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Operating Temperature :

-65°C~175°C TJ

Fall Time (Typ) :

30 ns

Case Connection :

DRAIN

Height :

4.6mm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Number of Terminations :

2

Terminal Form :

Gull wing

Number of Pins :

3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - annealed

Resistance :

16mOhm

Factory Lead Time :

12 Weeks

Weight :

4.535924g

Continuous Drain Current (ID) :

60A

Power Dissipation-Max :

110W Tc

Peak Reflow Temperature (Cel) :

245

Current Rating :

60A

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Width :

9.35mm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

240A

Series :

STripFET™ II