STB60NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

240A

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

STB60N

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

Current Rating :

60A

Pin Count :

4

Number of Pins :

3

Number of Elements :

1

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Rise Time :

130ns

Power Dissipation :

70W

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Fall Time (Typ) :

16 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

245

Vgs (Max) :

±20V

Series :

STripFET™ III

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 15V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

27 ns

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

24V

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

60A

Number of Terminations :

2

JESD-609 Code :

e3

Voltage - Rated DC :

24V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Avalanche Energy Rating (Eas) :

280 mJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

70W Tc

Drain-source On Resistance-Max :

0.0105Ohm

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 30A, 10V