STB6N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 100V

Avalanche Energy Rating (Eas) :

85 mJ

Continuous Drain Current (ID) :

4.5A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB6N

Case Connection :

DRAIN

Series :

SuperMESH5™

ECCN Code :

EAR99

Mounting Type :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Number of Channels :

1

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

800V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

85W Tc

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Weight :

3.949996g

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 100µA

DS Breakdown Voltage-Min :

800V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2A, 10V