STB6N60M2
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- Mfr.Part #
- STB6N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.5A D2PAK
- Stock
- 57
- In Stock ：
- 57
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 232pF @ 100V
- Series :
- MDmesh™ II Plus
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Fall Time (Typ) :
- 22.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Factory Lead Time :
- 26 Weeks
- Gate to Source Voltage (Vgs) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.25A, 10V
- Resistance :
- 1.2Ohm
- Power Dissipation-Max :
- 60W Tc
- Turn On Delay Time :
- 9.5 ns
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±25V
- Power Dissipation :
- 60W
- Continuous Drain Current (ID) :
- 4.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 7.4ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 9.35mm
- Turn-Off Delay Time :
- 24 ns
- Width :
- 4.6mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Length :
- 10.4mm
- Number of Channels :
- 1
- Base Part Number :
- STB6N
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Datasheets
- STB6N60M2
N-Channel Tape & Reel (TR) 1.2 Ω @ 2.25A, 10V ±25V 232pF @ 100V 8nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB6N60M2 Overview
A device's maximum input capacitance is 232pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB6N60M2 Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 24 ns
STB6N60M2 Applications
There are a lot of STMicroelectronics
STB6N60M2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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