STB6NK60ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - annealed

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Length :

10.75mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

6A

Transistor Application :

SWITCHING

Fall Time (Typ) :

19 ns

Power Dissipation :

110W

Width :

10.4mm

Height :

4.6mm

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

245

Element Configuration :

Single

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±30V

Lead Free :

Lead Free

Power Dissipation-Max :

110W Tc

Rise Time :

14ns

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

47 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Current Rating :

6A

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

24A

Base Part Number :

STB6N

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Radiation Hardening :

No

Threshold Voltage :

3.75V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 25V

Series :

SuperMESH™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc