STB2N62K3
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- Mfr.Part #
- STB2N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.2A TO263
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 50V
- Fall Time (Typ) :
- 22 ns
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 1.1A, 10V
- Turn-Off Delay Time :
- 21 ns
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 45W Tc
- Base Part Number :
- STB2N
- Radiation Hardening :
- No
- Turn On Delay Time :
- 8 ns
- Power Dissipation :
- 45W
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Resistance :
- 3.6Ohm
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Series :
- SuperMESH3™
- Drain to Source Breakdown Voltage :
- 620V
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 2.2A
- Rise Time :
- 4.4ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STB2N62K3
N-Channel Tape & Reel (TR) 3.6 Ω @ 1.1A, 10V ±30V 340pF @ 50V 15nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB2N62K3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 340pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.2A amps.In this device, the drain-source breakdown voltage is 620V and VGS=620V, so the drain-source breakdown voltage is 620V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STB2N62K3 Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 21 ns
STB2N62K3 Applications
There are a lot of STMicroelectronics
STB2N62K3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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