STB20N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Factory Lead Time :

17 Weeks

Power Dissipation-Max :

130W Tc

Continuous Drain Current (ID) :

18A

Resistance :

190mOhm

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

72A

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Base Part Number :

STB20N

Avalanche Energy Rating (Eas) :

270 mJ

Number of Elements :

1

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rise Time :

7.5ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 9A, 10V

Drain to Source Breakdown Voltage :

710V

Drain to Source Voltage (Vdss) :

650V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Radiation Hardening :

No

Series :

MDmesh™ V

Input Capacitance (Ciss) (Max) @ Vds :

1434pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

7.5 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±25V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

18A Tc