STB200NF04T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Turn On Delay Time :

30 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Series :

STripFET™ II

Gate to Source Voltage (Vgs) :

20V

Width :

9.35mm

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Number of Elements :

1

Rise Time :

320ns

Terminal Form :

Gull wing

Pbfree Code :

yes

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation-Max :

310W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Continuous Drain Current (ID) :

120A

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Packaging :

Cut Tape (CT)

Number of Terminations :

2

Base Part Number :

STB200N

Resistance :

3.7mOhm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Fall Time (Typ) :

120 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation :

310W

Height :

4.6mm

Radiation Hardening :

No

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

140 ns

Length :

10.4mm

Current Rating :

120A

Voltage - Rated DC :

40V