STB200N6F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Base Part Number :

STB200N

Avalanche Energy Rating (Eas) :

918 mJ

Pbfree Code :

yes

FET Type :

N-Channel

Transistor Element Material :

SILICON

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

330W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Terminal Position :

Single

Number of Pins :

3

Reach Compliance Code :

not_compliant

Series :

STripFET™

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Continuous Drain Current (ID) :

120A

Turn On Delay Time :

26 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

14 ns

Rise Time :

75ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Turn-Off Delay Time :

86 ns

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 60A, 10V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

480A

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)