STB200N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.004ohm

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

862 mJ

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

65 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Number of Pins :

3

Rise Time :

180ns

Series :

STripFET™

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

480A

Pbfree Code :

yes

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

90 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

300W

Transistor Application :

SWITCHING

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

4m Ω @ 80A, 10V

Continuous Drain Current (ID) :

60A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

REACH SVHC :

No SVHC

Base Part Number :

STB200N

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

40V

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA