STB200NF04-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Pulsed Drain Current-Max (IDM) :

480A

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Current Rating :

120A

Transistor Application :

SWITCHING

Voltage - Rated DC :

40V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

STripFET™ II

Continuous Drain Current (ID) :

120A

Mounting Type :

Through Hole

Base Part Number :

STB200N

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Count :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0037Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Avalanche Energy Rating (Eas) :

1300 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

320ns

ECCN Code :

EAR99

Power Dissipation-Max :

310W Tc

Terminal Position :

Single