STB28NM60ND
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- Mfr.Part #
- STB28NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23A D2PAK
- Stock
- 5,712
- In Stock ：
- 5,712
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 190W Tc
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 23.5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2090pF @ 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 27 ns
- Number of Channels :
- 1
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Base Part Number :
- STB28N
- Transistor Application :
- SWITCHING
- Weight :
- 3.949996g
- Length :
- 10.4mm
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 62.5nC @ 10V
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 92 ns
- Height :
- 4.6mm
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 11.5A, 10V
- Continuous Drain Current (ID) :
- 23A
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- FDmesh™ II
- Packaging :
- Cut Tape (CT)
- Width :
- 9.35mm
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 92A
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 650V
- Rise Time :
- 21.5ns
- Datasheets
- STB28NM60ND
N-Channel Cut Tape (CT) 150m Ω @ 11.5A, 10V ±25V 2090pF @ 100V 62.5nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB28NM60ND Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2090pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 23A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [92 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.A turn-on delay time of 23.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STB28NM60ND Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 92A.
a 600V drain to source voltage (Vdss)
STB28NM60ND Applications
There are a lot of STMicroelectronics
STB28NM60ND applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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