STB28NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

150W

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Power Dissipation-Max :

150W Tc

Pin Count :

4

Turn On Delay Time :

13.6 ns

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3V

Base Part Number :

STB28N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

10.4mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

4.6mm

Rise Time :

19ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

REACH SVHC :

No SVHC

Radiation Hardening :

No

Mount :

Surface Mount

Turn-Off Delay Time :

62 ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

FET Type :

N-Channel

Element Configuration :

Single

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

21A

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Fall Time (Typ) :

52 ns

Factory Lead Time :

26 Weeks

Number of Terminations :

2

ECCN Code :

EAR99

Length :

10.75mm

Contact Plating :

Tin

Number of Elements :

1

Series :

MDmesh™ II

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Pulsed Drain Current-Max (IDM) :

84A

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Rds On (Max) @ Id, Vgs :

158m Ω @ 10.5A, 10V

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1735pF @ 25V

Resistance :

135mOhm