STB28N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

88A

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 100V

Series :

MDmesh™ II Plus

Turn-Off Delay Time :

100 ns

Packaging :

Cut Tape (CT)

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Fall Time (Typ) :

8 ns

Weight :

3.949996g

Avalanche Energy Rating (Eas) :

350 mJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

7.2ns

Element Configuration :

Single

Number of Terminations :

2

Contact Plating :

Tin

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

150m Ω @ 11A, 10V

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

Power Dissipation-Max :

170W Tc

ECCN Code :

EAR99

Continuous Drain Current (ID) :

22A

Base Part Number :

STB28N

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Turn On Delay Time :

14.5 ns