STB28N60DM2

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Mfr.Part #
STB28N60DM2
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 21A D2PAK
Stock
4,533
In Stock :
4,533

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
FET Type :
N-Channel
Factory Lead Time :
17 Weeks
Base Part Number :
STB28N
Mount :
Surface Mount
Continuous Drain Current (ID) :
21A
Drain to Source Voltage (Vdss) :
600V
Threshold Voltage :
4V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Series :
MDmesh™ DM2
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Vgs (Max) :
±25V
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 100V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
160m Ω @ 10.5A, 10V
Power Dissipation-Max :
170W Tc
REACH SVHC :
No SVHC
Datasheets
STB28N60DM2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB28N60DM2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:STB28N, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, STB28N60DM2 pinout, STB28N60DM2 datasheet PDF, STB28N60DM2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB28N60DM2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB28N60DM2


N-Channel Tape & Reel (TR) 160m Ω @ 10.5A, 10V ±25V 1500pF @ 100V 34nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB28N60DM2 Description


STB28N60DM2 is an N-channel power MOSFET in the D2PAK package. This high voltage N-channel Power MOSFET is a part of the MDmesh? DM2 fast recovery diode series. The STMicroelectronics STB28N60DM2 offers a very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.



STB28N60DM2 Features


  • Low on-resistance

  • Fast-recovery body diode

  • Extremely low gate charge and input capacitance

  • Zener-protected

  • 100% avalanche tested

  • Extremely high dv/dt ruggedness



STB28N60DM2 Applications


  • indoor alarm systems

  • laptops to switch ON or OFF the screen

  • desktop PC computer

  • printers

  • power supplies

  • measuring equipment


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