STB27NM60ND

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Mfr.Part #
STB27NM60ND
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 21A D2PAK
Stock
10,457
In Stock :
10,457

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 50V
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
160m Ω @ 10.5A, 10V
Series :
Automotive, AEC-Q101, FDmesh™ II
Vgs(th) (Max) @ Id :
5V @ 250μA
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Power Dissipation-Max :
160W Tc
FET Type :
N-Channel
Fall Time (Typ) :
40 ns
Turn On Delay Time :
60 ns
Rise Time :
30ns
Vgs (Max) :
±25V
Gate to Source Voltage (Vgs) :
25V
Mount :
Surface Mount
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Turn-Off Delay Time :
50 ns
Packaging :
Tape and Reel (TR)
Configuration :
Single
Drain to Source Voltage (Vdss) :
600V
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Continuous Drain Current (ID) :
21A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Matte Tin (Sn) - annealed
Mounting Type :
Surface Mount
Power Dissipation :
160W
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Lead Free :
Lead Free
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Base Part Number :
STB27N
Datasheets
STB27NM60ND
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB27NM60ND from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:STB27N, STB27NM60ND pinout, STB27NM60ND datasheet PDF, STB27NM60ND amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB27NM60ND ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB27NM60ND


N-Channel Tape & Reel (TR) 160m Ω @ 10.5A, 10V ±25V 2400pF @ 50V 80nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB27NM60ND Overview


A device's maximal input capacitance is 2400pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 21A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STB27NM60ND Features


a continuous drain current (ID) of 21A
the turn-off delay time is 50 ns
a 600V drain to source voltage (Vdss)


STB27NM60ND Applications


There are a lot of STMicroelectronics
STB27NM60ND applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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