STB26NM60ND
- Mfr.Part #
- STB26NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A D2PAK
- Stock
- 1,162
- In Stock :
- 1,162
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 21A
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 600V
- Power Dissipation-Max :
- 190W Tc
- Transistor Element Material :
- SILICON
- Series :
- FDmesh™ II
- Fall Time (Typ) :
- 27.5 ns
- Turn On Delay Time :
- 22 ns
- Number of Elements :
- 1
- Base Part Number :
- STB26N
- Weight :
- 3.949996g
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1817pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Length :
- 10.4mm
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 10.5A, 10V
- Width :
- 9.35mm
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 600V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±25V
- Height :
- 4.6mm
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Rise Time :
- 14.5ns
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 54.6nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 69 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 84A
- Datasheets
- STB26NM60ND

N-Channel Tape & Reel (TR) 175m Ω @ 10.5A, 10V ±25V 1817pF @ 100V 54.6nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB26NM60ND Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1817pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 69 ns.Peak drain current is 84A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB26NM60ND Features
a continuous drain current (ID) of 21A
the turn-off delay time is 69 ns
based on its rated peak drain current 84A.
a 600V drain to source voltage (Vdss)
STB26NM60ND Applications
There are a lot of STMicroelectronics
STB26NM60ND applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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