STB26NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

85 ns

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

80A

Resistance :

165mOhm

Series :

MDmesh™ II

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Length :

10.75mm

Element Configuration :

Single

Fall Time (Typ) :

50 ns

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

2V

Height :

4.83mm

Number of Pins :

3

Width :

10.4mm

Power Dissipation-Max :

140W Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STB26N

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Factory Lead Time :

26 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Manufacturer Package Identifier :

D2PAK-0079457

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

165m Ω @ 10A, 10V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Turn On Delay Time :

13 ns

Power Dissipation :

140W

Mount :

Surface Mount

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

245