STB25NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

160mOhm

Avalanche Energy Rating (Eas) :

850 mJ

Length :

10.75mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

60 ns

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Height :

4.6mm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

STB25N

Power Dissipation :

160W

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Pins :

3

Transistor Application :

SWITCHING

Width :

10.4mm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Series :

FDmesh™ II

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

21A Tc

JESD-30 Code :

R-PSSO-G2

Rise Time :

30ns

Fall Time (Typ) :

40 ns

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Pin Count :

4

Peak Reflow Temperature (Cel) :

245

Turn-Off Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Continuous Drain Current (ID) :

21A

Mount :

Surface Mount

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

84A

Power Dissipation-Max :

160W Tc