STB25NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

18ns

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Power Dissipation :

160W

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

20A

Number of Pins :

3

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Mount :

Surface Mount

Termination :

SMD/SMT

Element Configuration :

Single

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

850 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

4

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation-Max :

160W Tc

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Dual Supply Voltage :

600V

Series :

MDmesh™ II

Pulsed Drain Current-Max (IDM) :

84A

JESD-609 Code :

e3

Vgs (Max) :

±25V

Nominal Vgs :

3 V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

94 ns

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Resistance :

160mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB25N

Voltage - Rated DC :

600V

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

21A