STB25NM50N-1
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- Mfr.Part #
- STB25NM50N-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A I2PAK
- Stock
- 2,061
- In Stock ：
- 2,061
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 22A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 23ns
- Pin Count :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins :
- 3
- Resistance :
- 140mOhm
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- STB25N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 22 ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Series :
- MDmesh™ II
- Pulsed Drain Current-Max (IDM) :
- 88A
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 11A, 10V
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2565pF @ 25V
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation-Max :
- 160W Tc
- Power Dissipation :
- 160W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 500V
- Lead Free :
- Lead Free
- Current Rating :
- 22A
- JESD-609 Code :
- e3
- Datasheets
- STB25NM50N-1
N-Channel Tube 140m Ω @ 11A, 10V ±25V 2565pF @ 25V 84nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STB25NM50N-1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2565pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 88A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB25NM50N-1 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 88A.
STB25NM50N-1 Applications
There are a lot of STMicroelectronics
STB25NM50N-1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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