STB24N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation-Max :

150W Tc

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

650V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

16A

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

650 mJ

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

64A

Transistor Element Material :

SILICON

Series :

MDmesh™ M2

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Drain-source On Resistance-Max :

0.23Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Base Part Number :

STB24N

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Elements :

1

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 100V

Rds On (Max) @ Id, Vgs :

230m Ω @ 8A, 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Mount :

Surface Mount