STB24N60M6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

52.5A

Avalanche Energy Rating (Eas) :

250 mJ

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

17A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.19Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Base Part Number :

STB24N

Factory Lead Time :

16 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Operating Temperature (Min) :

-55°C

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

600V

Series :

MDmesh™ M6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Number of Terminations :

2