STB24N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

61 ns

Series :

MDmesh™ II Plus

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn-Off Delay Time :

15 ns

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation-Max :

150W Tc

Terminal Form :

THROUGH-HOLE

Number of Pins :

3

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Length :

10.4mm

Resistance :

190mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Number of Terminations :

3

Base Part Number :

STB24N

Continuous Drain Current (ID) :

18A

Factory Lead Time :

26 Weeks

Rise Time :

9ns

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 100V

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Elements :

1

Case Connection :

DRAIN

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation :

150W

Turn On Delay Time :

14 ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 9A, 10V

Mounting Type :

Surface Mount

Width :

9.35mm

Avalanche Energy Rating (Eas) :

180 mJ

Height :

4.6mm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

72A

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB