STB24N60DM2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

200m Ω @ 9A, 10V

Vgs (Max) :

±25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Pulsed Drain Current-Max (IDM) :

72A

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1055pF @ 100V

Factory Lead Time :

17 Weeks

Base Part Number :

STB24N

Mounting Type :

Surface Mount

Mount :

Surface Mount

DS Breakdown Voltage-Min :

600V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

150W Tc

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

180 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.2Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

18A

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Series :

FDmesh™ II Plus

RoHS Status :

ROHS3 Compliant