STB23NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Rise Time :

45ns

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

150W

Power Dissipation-Max :

150W Tc

ECCN Code :

EAR99

Continuous Drain Current (ID) :

10A

REACH SVHC :

No SVHC

Fall Time (Typ) :

40 ns

Width :

10.4mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

21 ns

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Avalanche Energy Rating (Eas) :

700 mJ

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Terminal Form :

Gull wing

Base Part Number :

STB23N

Lead Free :

Lead Free

Number of Elements :

1

Pin Count :

4

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

78A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Length :

10.75mm

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Number of Terminations :

2

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Element Configuration :

Single

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Height :

4.6mm

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

90 ns

Series :

FDmesh™ II

Operating Temperature :

150°C TJ