STB23NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

90 ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™ II

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

150W Tc

Fall Time (Typ) :

36 ns

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Radiation Hardening :

No

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

150W

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

76A

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Element Configuration :

Single

Resistance :

180mOhm

Number of Pins :

3

Continuous Drain Current (ID) :

19A

Turn On Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

700 mJ

Rise Time :

15ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

180m Ω @ 9.5A, 10V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Mount :

Surface Mount

Base Part Number :

STB23N

Pbfree Code :

yes

Vgs (Max) :

±25V