STB23NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Series :

MDmesh™ II

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Base Part Number :

STB23N

Drain to Source Breakdown Voltage :

500V

Terminal Form :

Gull wing

Width :

10.4mm

Length :

10.75mm

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

190mOhm

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Pins :

3

Turn On Delay Time :

6.6 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

68A

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

29 ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation-Max :

125W Tc

Lead Free :

Lead Free

Rise Time :

19ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation :

125W

Avalanche Energy Rating (Eas) :

254 mJ

Height :

4.6mm

Continuous Drain Current (ID) :

17A

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Pin Count :

4

Factory Lead Time :

26 Weeks

Threshold Voltage :

3V

Turn-Off Delay Time :

71 ns

Operating Temperature :

150°C TJ