STB22NS25ZT4
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- Mfr.Part #
- STB22NS25ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 22A D2PAK
- Stock
- 32,986
- In Stock ：
- 32,986
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 78 ns
- Drain to Source Breakdown Voltage :
- 250V
- Threshold Voltage :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Peak Reflow Temperature (Cel) :
- 245
- Lead Free :
- Lead Free
- Rise Time :
- 30ns
- Series :
- MESH OVERLAY™
- Pulsed Drain Current-Max (IDM) :
- 88A
- Power Dissipation :
- 135W
- Continuous Drain Current (ID) :
- 11A
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- STB22N
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 250V
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 11A, 10V
- Drain-source On Resistance-Max :
- 0.15Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 22A
- Power Dissipation-Max :
- 135W Tc
- Datasheets
- STB22NS25ZT4
N-Channel Tape & Reel (TR) 150m Ω @ 11A, 10V ±20V 2400pF @ 25V 151nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB22NS25ZT4 Overview
A device's maximum input capacitance is 2400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its maximum pulsed drain current is 88A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB22NS25ZT4 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 88A.
a threshold voltage of 3V
STB22NS25ZT4 Applications
There are a lot of STMicroelectronics
STB22NS25ZT4 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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