STB22NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Threshold Voltage :

3V

REACH SVHC :

No SVHC

FET Type :

N-Channel

Series :

MDmesh™ II

Pulsed Drain Current-Max (IDM) :

64A

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

125W Tc

Peak Reflow Temperature (Cel) :

245

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.75mm

Continuous Drain Current (ID) :

16A

Resistance :

220mOhm

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

220m Ω @ 8A, 10V

Turn On Delay Time :

11 ns

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Height :

4.6mm

Power Dissipation :

125W

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 100µA

Width :

10.4mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Base Part Number :

STB22N

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

74 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Operating Temperature :

150°C TJ

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Surface Mount

Fall Time (Typ) :

38 ns