STB21NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Turn-Off Delay Time :

70 ns

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.6mm

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Length :

10.75mm

Power Dissipation :

140W

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

140W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Radiation Hardening :

No

FET Type :

N-Channel

Width :

10.4mm

Pulsed Drain Current-Max (IDM) :

68A

Drain to Source Breakdown Voltage :

600V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

245

Lead Free :

Lead Free

JESD-609 Code :

e3

Pin Count :

4

Transistor Application :

SWITCHING

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Mounting Type :

Surface Mount

Rise Time :

16ns

Resistance :

170mOhm

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

FDmesh™ II

Continuous Drain Current (ID) :

17A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

48 ns

Vgs (Max) :

±25V

Base Part Number :

STB21N