STB21NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

3 V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

68A

Power Dissipation-Max :

140W Tc

ECCN Code :

EAR99

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Pin Count :

4

REACH SVHC :

No SVHC

Voltage - Rated DC :

600V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Turn-Off Delay Time :

84 ns

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Series :

MDmesh™

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Rise Time :

15ns

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

31 ns

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

17A

Dual Supply Voltage :

600V

Peak Reflow Temperature (Cel) :

245

Termination :

SMD/SMT

Power Dissipation :

140W

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

17A

Terminal Form :

Gull wing

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Resistance :

220mOhm

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STB21N

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30