STB21N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Base Part Number :

STB21N

Continuous Drain Current (ID) :

17A

Drain to Source Breakdown Voltage :

650V

Pin Count :

4

Width :

10.4mm

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

150°C TJ

Number of Elements :

1

Height :

4.6mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Form :

Gull wing

Number of Pins :

3

Series :

MDmesh™ V

Power Dissipation :

125W

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.5A, 10V

Power Dissipation-Max :

125W Tc

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Mount :

Surface Mount

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

68A

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Mounting Type :

Surface Mount

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Resistance :

150Ohm

Factory Lead Time :

17 Weeks

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.75mm

Transistor Application :

SWITCHING

Contact Plating :

Tin

Nominal Vgs :

4 V

JESD-609 Code :

e3