STB20NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Rise Time :

20ns

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

80A

Series :

MDmesh™

Number of Elements :

1

Number of Terminations :

2

Turn-Off Delay Time :

42 ns

Number of Pins :

3

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

650 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

290mOhm

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Base Part Number :

STB20N

Operating Temperature :

150°C TJ

Power Dissipation-Max :

192W Tc

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Factory Lead Time :

26 Weeks

Radiation Hardening :

No

Turn On Delay Time :

25 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Fall Time (Typ) :

11 ns

Voltage - Rated DC :

650V

FET Type :

N-Channel

ECCN Code :

EAR99

Power Dissipation :

192W

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Continuous Drain Current (ID) :

20A

Current Rating :

20A

Terminal Finish :

Matte Tin (Sn) - annealed

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON