STB20NM60D
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- Mfr.Part #
- STB20NM60D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A D2PAK
- Stock
- 11,009
- In Stock ：
- 11,009
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 290mOhm
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 192W Tc
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- ECCN Code :
- EAR99
- Power Dissipation :
- 192W
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 600V
- Rise Time :
- 12ns
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 80A
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Terminal Form :
- Gull wing
- Base Part Number :
- STB20N
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 20A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Series :
- FDmesh™
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 245
- Factory Lead Time :
- 26 Weeks
- Fall Time (Typ) :
- 22 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 25 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 10A, 10V
- Datasheets
- STB20NM60D
N-Channel Tape & Reel (TR) 290m Ω @ 10A, 10V ±30V 1300pF @ 25V 52nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB20NM60D Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.As far as peak drain current is concerned, its maximum pulsed current is 80A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STB20NM60D Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
based on its rated peak drain current 80A.
STB20NM60D Applications
There are a lot of STMicroelectronics
STB20NM60D applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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