STB20NM60-1
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- Mfr.Part #
- STB20NM60-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A I2PAK
- Stock
- 7,814
- In Stock ：
- 7,814
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Fall Time (Typ) :
- 11 ns
- Drain to Source Breakdown Voltage :
- 600V
- Current Rating :
- 20A
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tube
- Rise Time :
- 20ns
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 600V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Power Dissipation-Max :
- 192W Tc
- Power Dissipation :
- 192W
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- MDmesh™
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Base Part Number :
- STB20N
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 20A
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 42 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STB20NM60-1
N-Channel Tube 290m Ω @ 10A, 10V ±30V 1500pF @ 25V 54nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STB20NM60-1 Overview
A device's maximal input capacitance is 1500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
STB20NM60-1 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 42 ns
STB20NM60-1 Applications
There are a lot of STMicroelectronics
STB20NM60-1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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