STB20NM50-1
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- Mfr.Part #
- STB20NM50-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 20A I2PAK
- Stock
- 1,562
- In Stock ：
- 1,562
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Resistance :
- 200mOhm
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 550V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1480pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 10A, 10V
- Series :
- MDmesh™
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 20A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Tube
- Power Dissipation :
- 192W
- Base Part Number :
- STB20N
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 192W Tc
- Turn-Off Delay Time :
- 9 ns
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Rise Time :
- 16ns
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 80A
- Fall Time (Typ) :
- 8.5 ns
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 20A
- Number of Pins :
- 3
- Datasheets
- STB20NM50-1
N-Channel Tube 250m Ω @ 10A, 10V ±30V 1480pF @ 25V 56nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STB20NM50-1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 650 mJ.A device's maximum input capacitance is 1480pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 9 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB20NM50-1 Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 9 ns
based on its rated peak drain current 80A.
STB20NM50-1 Applications
There are a lot of STMicroelectronics
STB20NM50-1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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