STB20NK50ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

20A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

ECCN Code :

EAR99

FET Type :

N-Channel

Continuous Drain Current (ID) :

17A

Current Rating :

17A

Nominal Vgs :

3.75 V

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

119nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

270mOhm

Fall Time (Typ) :

15 ns

Series :

SuperMESH™

Base Part Number :

STB20N

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

27 ns

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

270m Ω @ 8.5A, 10V

Pulsed Drain Current-Max (IDM) :

68A

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

28 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Rise Time :

20ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

190W Tc

Voltage - Rated DC :

500V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Element Material :

SILICON

Power Dissipation :

190W

Radiation Hardening :

No

Lead Free :

Lead Free

Pin Count :

3

Drain to Source Breakdown Voltage :

500V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

850 mJ

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

245