STB20N95K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Rise Time :

12ns

JESD-609 Code :

e3

Base Part Number :

STB20N

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

950V

Pulsed Drain Current-Max (IDM) :

70A

Current - Continuous Drain (Id) @ 25°C :

17.5A Tc

FET Type :

N-Channel

Series :

SuperMESH5™

Mount :

Surface Mount

Case Connection :

DRAIN

Power Dissipation-Max :

250W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Packaging :

Cut Tape (CT)

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

17 ns

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

Power Dissipation :

250W

Turn-Off Delay Time :

70 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 100V

Resistance :

330mOhm

Rds On (Max) @ Id, Vgs :

330m Ω @ 9A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Fall Time (Typ) :

20 ns

Peak Reflow Temperature (Cel) :

245

Continuous Drain Current (ID) :

17.5A

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 100µA