STB19NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Breakdown Voltage :

650V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

2

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

15.5A Tc

Rise Time :

8ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

25 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Turn-Off Delay Time :

80 ns

Radiation Hardening :

No

Base Part Number :

STB19N

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

62A

Series :

MDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.27Ohm

Vgs (Max) :

±25V

Terminal Form :

Gull wing

Power Dissipation :

150W

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Avalanche Energy Rating (Eas) :

400 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

26 ns

Number of Pins :

3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.75A, 10V

Continuous Drain Current (ID) :

15.5A

Power Dissipation-Max :

150W Tc

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1