STB19NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

11 ns

Power Dissipation-Max :

90W Tc

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Length :

10.75mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

22ns

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mount :

Surface Mount

Radiation Hardening :

No

Contact Plating :

Tin

Series :

MESH OVERLAY™

Element Configuration :

Single

Transistor Element Material :

SILICON

Lead Free :

Lead Free

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Height :

4.6mm

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11.5 ns

Pulsed Drain Current-Max (IDM) :

60A

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

160m Ω @ 7.5A, 10V

Resistance :

160mOhm

Base Part Number :

STB19N

Number of Terminations :

2

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Number of Pins :

3

Width :

10.4mm

Power Dissipation :

90W

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

15A