STB190NF04T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Voltage - Rated DC :

40V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

860 mJ

Current Rating :

120A

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

480A

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

FET Type :

N-Channel

Base Part Number :

STB190N

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 95A, 10V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Pbfree Code :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

120A

Power Dissipation-Max :

310W Tc

Mounting Type :

Surface Mount

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Fall Time (Typ) :

75 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

STripFET™ III

Power Dissipation :

310W

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Rise Time :

380ns

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

100 ns

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified