STB18NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

245

Rds On (Max) @ Id, Vgs :

295m Ω @ 8.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Pulsed Drain Current-Max (IDM) :

68A

Height :

4.6mm

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Elements :

1

Pin Count :

4

Vgs (Max) :

±25V

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

50 ns

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

17A

Resistance :

295mOhm

Series :

MDmesh™

Avalanche Energy Rating (Eas) :

600 mJ

Number of Terminations :

2

Power Dissipation :

190W

Drain to Source Breakdown Voltage :

800V

Number of Pins :

3

Turn-Off Delay Time :

96 ns

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Width :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Packaging :

Cut Tape (CT)

Length :

10.75mm

Element Configuration :

Single

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Rise Time :

28ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Turn On Delay Time :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STB18N

Power Dissipation-Max :

190W Tc

REACH SVHC :

No SVHC