STB18NM60ND
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- Mfr.Part #
- STB18NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A D2PAK
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 110W Tc
- Fall Time (Typ) :
- 18 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 6.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 13 ns
- Avalanche Energy Rating (Eas) :
- 187 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- DS Breakdown Voltage-Min :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Series :
- FDmesh™ II
- Base Part Number :
- STB18N
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 50V
- Width :
- 8.95mm
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Length :
- 10mm
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 15.5ns
- Mount :
- Surface Mount
- Height :
- 4.4mm
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 52A
- Continuous Drain Current (ID) :
- 13A
- Number of Elements :
- 1
- Turn On Delay Time :
- 55 ns
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- Resistance :
- 290mOhm
- Datasheets
- STB18NM60ND
N-Channel Cut Tape (CT) 290m Ω @ 6.5A, 10V ±25V 1030pF @ 50V 34nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB18NM60ND Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 187 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1030pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 52A.A turn-on delay time of 55 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STB18NM60ND Features
the avalanche energy rating (Eas) is 187 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 13 ns
based on its rated peak drain current 52A.
a 600V drain to source voltage (Vdss)
STB18NM60ND Applications
There are a lot of STMicroelectronics
STB18NM60ND applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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